Invention Grant
- Patent Title: Etching liquid for film of multilayer structure containing copper layer and molybdenum layer
- Patent Title (中): 含有铜层和钼层的多层结构膜蚀刻液
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Application No.: US13805118Application Date: 2011-05-27
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Publication No.: US09580818B2Publication Date: 2017-02-28
- Inventor: Satoshi Tamai , Satoshi Okabe , Masahide Matsubara , Kunio Yube
- Applicant: Satoshi Tamai , Satoshi Okabe , Masahide Matsubara , Kunio Yube
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-139783 20100618
- International Application: PCT/JP2011/062218 WO 20110527
- International Announcement: WO2011/158634 WO 20111222
- Main IPC: C23F1/10
- IPC: C23F1/10 ; C23F1/14 ; C23F1/18 ; C23F1/26 ; C23F1/34 ; C23F1/38 ; H01L21/3213

Abstract:
The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.
Public/Granted literature
- US20130105729A1 ETCHING LIQUID FOR FILM OF MULTILAYER STRUCTURE CONTAINING COPPER LAYER AND MOLYBDENUM LAYER Public/Granted day:2013-05-02
Information query
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