Invention Grant
- Patent Title: XMR-sensor and method for manufacturing the XMR-sensor
- Patent Title (中): XMR传感器和制造XMR传感器的方法
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Application No.: US14969378Application Date: 2015-12-15
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Publication No.: US09581661B2Publication Date: 2017-02-28
- Inventor: Juergen Zimmer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G01R33/02
- IPC: G01R33/02 ; G01R33/09 ; H05K3/30 ; G01R33/00

Abstract:
An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.
Public/Granted literature
- US20160097827A1 XMR-SENSOR AND METHOD FOR MANUFACTURING THE XMR-SENSOR Public/Granted day:2016-04-07
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