Invention Grant
US09581905B2 Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound 有权
成膜用组合物,抗蚀剂下层膜及其形成方法,图案形成方法和化合物

Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound
Abstract:
A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.
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