Invention Grant
US09581905B2 Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound
有权
成膜用组合物,抗蚀剂下层膜及其形成方法,图案形成方法和化合物
- Patent Title: Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound
- Patent Title (中): 成膜用组合物,抗蚀剂下层膜及其形成方法,图案形成方法和化合物
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Application No.: US14959223Application Date: 2015-12-04
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Publication No.: US09581905B2Publication Date: 2017-02-28
- Inventor: Shin-ya Nakafuji , Fumihiro Toyokawa , Goji Wakamatsu , Shingo Takasugi , Tooru Kimura
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-132125 20130624
- Main IPC: G03F7/16
- IPC: G03F7/16 ; G03F7/36 ; G03F7/11 ; C07C33/38 ; C07C15/50 ; C08F38/00 ; C07C33/28 ; C07C39/21 ; C07C43/215 ; C07C25/24 ; H01L21/027 ; C07C211/50 ; C07C211/58 ; C07C15/54 ; C07C15/58 ; C07C15/14 ; C07C15/18

Abstract:
A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.
Public/Granted literature
Information query
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