Invention Grant
- Patent Title: Memory system and method for efficient padding of memory pages
- Patent Title (中): 用于高效填充内存页的内存系统和方法
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Application No.: US14665893Application Date: 2015-03-23
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Publication No.: US09582435B2Publication Date: 2017-02-28
- Inventor: Vimal Jain , Abhijeet Manohar , Aaron Lee , Anne Pao-Ling Koh
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/16 ; G06F12/14 ; G06F3/06

Abstract:
In one embodiment, a memory system is provided comprising a memory die and a controller. The memory die comprises a non-volatile memory, a data latch, and an on-chip randomizer. The controller is configured to send a command to the memory die to cause the on-chip randomizer to store random data in the data latch and send data to the memory die to overwrite some, but not all, of the random data in the data latch, wherein the memory die is configured to transfer the data and random data stored in the data latch to the non-volatile memory. Other embodiments are provided.
Public/Granted literature
- US20160283110A1 Memory System and Method for Efficient Padding of Memory Pages Public/Granted day:2016-09-29
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