Invention Grant
US09583171B2 Write driver circuits for resistive random access memory (RAM) arrays
有权
为电阻随机存取存储器(RAM)阵列写入驱动电路
- Patent Title: Write driver circuits for resistive random access memory (RAM) arrays
- Patent Title (中): 为电阻随机存取存储器(RAM)阵列写入驱动电路
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Application No.: US14644631Application Date: 2015-03-11
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Publication No.: US09583171B2Publication Date: 2017-02-28
- Inventor: Jung Pill Kim , Sungryul Kim , Taehyun Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/16

Abstract:
Aspects disclosed in the detailed description include write driver circuits for resistive random access memory (RAM) arrays. In one aspect, a write driver circuit is provided to facilitate writing data into a resistive RAM array in a memory system. The write driver circuit is coupled to a selector circuit configured to select a memory bitcell(s) in the resistive RAM array for a write operation. An isolation circuit is provided in the write driver circuit to couple a current source to the selector circuit to provide a write voltage during the write operation and to isolate the current source from the selector circuit when the selector circuit is not engaged in the write operation. By isolating the selector circuit from the current source when the selector circuit is on standby, it is possible to reduce leakage current in the selector circuit, thus reducing standby power consumption in the memory system.
Public/Granted literature
- US20160267959A1 WRITE DRIVER CIRCUITS FOR RESISTIVE RANDOM ACCESS MEMORY (RAM) ARRAYS Public/Granted day:2016-09-15
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