Invention Grant
- Patent Title: High density memory architecture
- Patent Title (中): 高密度内存架构
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Application No.: US14963111Application Date: 2015-12-08
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Publication No.: US09583209B1Publication Date: 2017-02-28
- Inventor: Rajiv Kumar Roy , Fakhruddin Ali Bohra , Manish Trivedi , Sumant Kumar Thapliyal , Vikash
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C17/08

Abstract:
Various implementations described herein are directed to an integrated circuit having high density memory architecture. The integrated circuit may include a plurality of bank arrays having multiple segments of bitcells configured to share local control. The integrated circuit may include a plurality of control lines coupling the local control to each of the multiple segments of bitcells. In some instances, during activation of a segment of bitcells by the local control via one of the control lines, another segment of bitcells may be deactivated by the local control via another of the control lines.
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