The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil.