A manufacturing method for a semiconductor device, the method, comprising forming, on a substrate, a first resist pattern including a plurality of line patterns extending in a predetermined direction, injecting an impurity into the substrate by using the first resist pattern, removing the first resist pattern, forming a second resist pattern including a plurality of second line patterns extending in the predetermined direction, and injecting an impurity into the substrate by using the second resist pattern, wherein, in the forming the second resist pattern, the plurality of second line patterns are respectively formed between places where the adjacent first line patterns are formed.