Invention Grant
- Patent Title: Method of etching and cleaning wafers
- Patent Title (中): 蚀刻和清洗晶圆的方法
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Application No.: US14829239Application Date: 2015-08-18
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Publication No.: US09583352B2Publication Date: 2017-02-28
- Inventor: Wen-Chang Tsai , Shao-Yen Ku , Hsieh-Ching Wei , Yuan Chih Chiang , Jui-Chuan Chang , Yung-Li Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/66 ; H01L21/677 ; H01L21/02 ; H01L21/673 ; H01L21/67 ; G05B19/418
Abstract:
A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.
Public/Granted literature
- US20150357198A1 METHOD OF ETCHING AND CLEANING WAFERS Public/Granted day:2015-12-10
Information query
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