Systems and methods for reverse pulsing

Invention Grant

US09583357B1 Systems and methods for reverse pulsing 有权

Title translation: 用于反向脉冲的系统和方法

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Patent Title: Systems and methods for reverse pulsing
Patent Title (中): 用于反向脉冲的系统和方法
Application No.: US15139045

Application Date: 2016-04-26
Publication No.: US09583357B1

Publication Date: 2017-02-28
Inventor: Maolin Long , Zhongkui Tan , Ying Wu , Qian Fu , Alex Paterson , John Drewery
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Martine Penilla Group, LLP
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/311 ; H01L21/67

Abstract:

Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

Abstract(Chinese):

描述了用于反向脉冲的系统和方法。方法之一包括接收具有第一状态和第二状态的数字信号。该方法还包括当数字信号处于第一状态时产生具有高状态的变压器耦合等离子体（TCP）射频（RF）脉冲信号，并且当数字信号处于第二状态时具有低状态。该方法包括将TCP RF脉冲信号提供给等离子体室的一个或多个线圈，当数字信号处于第一状态时产生具有低状态的偏置RF脉冲信号，并且当数字信号处于并且将偏压RF脉冲信号提供给等离子体室的卡盘。

Public/Granted literature

US20170040176A1 SYSTEMS AND METHODS FOR REVERSE PULSING Public/Granted day:2017-02-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀