Invention Grant
US09583363B2 Processes and apparatus for preparing heterostructures with reduced strain by radial distension
有权
通过径向膨胀减少应变来制备异质结构的方法和装置
- Patent Title: Processes and apparatus for preparing heterostructures with reduced strain by radial distension
- Patent Title (中): 通过径向膨胀减少应变来制备异质结构的方法和装置
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Application No.: US14142553Application Date: 2013-12-27
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Publication No.: US09583363B2Publication Date: 2017-02-28
- Inventor: Robert J. Falster , Vladimir V. Voronkov , John A. Pitney , Peter D. Albrecht
- Applicant: SunEdison Semiconductor Limited (UEN201334164H)
- Applicant Address: US MO St. Peters
- Assignee: SunEdison Semiconductor Limited (UEN201334164H)
- Current Assignee: SunEdison Semiconductor Limited (UEN201334164H)
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/302 ; H01L21/687 ; C30B25/12
Abstract:
Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.
Public/Granted literature
- US20140187022A1 Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension Public/Granted day:2014-07-03
Information query
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