Invention Grant
- Patent Title: Debonding temporarily bonded semiconductor wafers
- Patent Title (中): 剥离暂时粘合的半导体晶片
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Application No.: US15188189Application Date: 2016-06-21
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Publication No.: US09583374B2Publication Date: 2017-02-28
- Inventor: Gregory George , Christopher Rosenthal
- Applicant: SUSS MicroTec Lithography GmbH
- Applicant Address: DE
- Assignee: SUSS MicroTec Lithography GmbH
- Current Assignee: SUSS MicroTec Lithography GmbH
- Current Assignee Address: DE
- Agency: Hayes Soloway PC
- Main IPC: B32B38/10
- IPC: B32B38/10 ; H01L21/683 ; H01L21/67 ; B32B43/00 ; B32B38/18

Abstract:
Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.
Public/Granted literature
- US20160300747A1 Debonding Temporarily Bonded Semiconductor Wafers Public/Granted day:2016-10-13
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