Invention Grant
- Patent Title: Formation of germanium-containing channel region by thermal condensation utilizing an oxygen permeable material
- Patent Title (中): 通过使用透氧材料的热凝结形成含锗沟道区
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Application No.: US14267520Application Date: 2014-05-01
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Publication No.: US09583378B2Publication Date: 2017-02-28
- Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Ghavam G. Shahidi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; H01L21/8238 ; H01L21/762 ; H01L21/3105 ; H01L21/84

Abstract:
A structure including a first semiconductor material portion and a second semiconductor material portion is provided. An oxygen impermeable hard mask is then formed directly on a surface of the first semiconductor material portion. Next, a silicon germanium layer is epitaxially formed on the second semiconductor material portion, but not the first semiconductor material portion. An oxygen permeable hard mask is then formed over the first and second semiconductor material portions. A thermal condensation process is then performed which converts the second semiconductor material portion into a germanium-containing semiconductor material portion. The oxygen permeable hard mask and the oxygen impermeable hard mask are then removed. A functional gate structure can be formed atop the remaining first semiconductor material portion and the thus formed germanium-containing semiconductor material portion.
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