Invention Grant
- Patent Title: Manufacturing method of semiconductor structure
- Patent Title (中): 半导体结构的制造方法
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Application No.: US15293292Application Date: 2016-10-14
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Publication No.: US09583394B2Publication Date: 2017-02-28
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Hon-Huei Liu , Chao-Hung Lin , Nan-Yuan Huang , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510311627 20150609
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L29/423 ; H01L21/308 ; H01L27/092 ; H01L21/306 ; H01L29/06 ; H01L21/762
Abstract:
The present invention provides a method for forming a semiconductor structure, comprising: firstly, a substrate is provided, having a first fin structure and a second fin structure disposed thereon, next, a first isolation region is formed between the first fin structure and the second fin structure, a second isolation region is formed opposite the first fin structure from the first isolation region, and at least an epitaxial layer is formed on the side of the first fin structure and the second fin structure, wherein the epitaxial layer has a bottom surface, the bottom surface extending from the first fin structure to the second fin structure, and the bottom surface is lower than a bottom surface of the first isolation region and a top surface of the second isolation region, in addition, the epitaxial layer has a stepped-shaped sidewall profile.
Public/Granted literature
- US20170033015A1 MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Public/Granted day:2017-02-02
Information query
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