Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14953953Application Date: 2015-11-30
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Publication No.: US09583407B2Publication Date: 2017-02-28
- Inventor: Hiroshi Yoshida , Yoshitaka Otsubo , Hidetoshi Ishibashi , Kenta Nakahara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-090011 20150427
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/053 ; H01L23/10 ; H01L23/13 ; H01L23/498 ; H01L23/373 ; H01L23/057 ; H01L23/29 ; H01L23/00
Abstract:
A first conductor layer is provided on a first surface of an insulating plate, and has a first volume. A second conductor layer is provided on a second surface of the insulating plate, and has a second volume. A third conductor layer is provided on a second surface of the insulating plate, and has a second volume. The third conductor layer has a mounting region thicker than the second conductor layer. The sum of the second and third volumes is greater than or equal to 70% and smaller than or equal to 130% of the first volume. A semiconductor chip is provided on the mounting region. A sealing part is formed of an insulator, and seals the semiconductor chip within a case.
Public/Granted literature
- US20160315023A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-10-27
Information query
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