Invention Grant
US09583471B2 Integrated circuit module having a first die with a power amplifier stacked with a second die and method of making the same
有权
具有第一管芯的集成电路模块，具有与第二管芯堆叠的功率放大器及其制造方法
- Patent Title: Integrated circuit module having a first die with a power amplifier stacked with a second die and method of making the same
- Patent Title (中): 具有第一管芯的集成电路模块，具有与第二管芯堆叠的功率放大器及其制造方法
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Application No.: US14595451Application Date: 2015-01-13
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Publication No.: US09583471B2Publication Date: 2017-02-28
- Inventor: Douglas Andrew Teeter , Ming Ji , Bhavin Shah , Mohsen Haji-Rahim , William Kent Braxton
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L25/04
- IPC: H01L25/04 ; H01L25/065 ; H01L25/18 ; H03F3/195 ; H01L25/00 ; H01L23/00 ; H01L23/40 ; H01L25/075 ; H01L23/66
Abstract:
Disclosed is an integrated circuit module that includes a first die having a plurality of hot regions and at least one cool region when operating under normal conditions. The first die with a top surface includes at least one power amplifier that resides in the plurality of hot regions. The integrated circuit module also includes a second die. The second die has a bottom surface, which is adhered to the top surface of the first die, wherein any portion of the bottom surface of the second die that is adhered to the top surface of the first die resides exclusively on the at least one cool region. In at least one embodiment, the first die is an RF power amplifier die and the second die is a controller die having control circuitry configured to control the at least one power amplifier that is an RF power amplifier type.
Public/Granted literature
Information query
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