Invention Grant
- Patent Title: High voltage semiconductor devices and methods of making the devices
- Patent Title (中): 高压半导体器件及其制造方法
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Application No.: US14619742Application Date: 2015-02-11
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Publication No.: US09583482B2Publication Date: 2017-02-28
- Inventor: Kevin Matocha , Kiran Chatty , Sujit Banerjee
- Applicant: Monolith Semiconductor, Inc.
- Applicant Address: US TX Round Rock
- Assignee: MONOLITH SEMICONDUCTOR INC.
- Current Assignee: MONOLITH SEMICONDUCTOR INC.
- Current Assignee Address: US TX Round Rock
- Agency: Offit Kurman
- Agent Christopher W. Raimund
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8234 ; H01L29/16 ; H01L29/06
Abstract:
A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.
Public/Granted literature
- US20160233210A1 HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES Public/Granted day:2016-08-11
Information query
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