Invention Grant
US09583485B2 Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
有权
Fin场效应晶体管（FinFET）器件结构具有不均匀栅极结构及其形成方法
- Patent Title: Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
- Patent Title (中): Fin场效应晶体管（FinFET）器件结构具有不均匀栅极结构及其形成方法
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Application No.: US14737066Application Date: 2015-06-11
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Publication No.: US09583485B2Publication Date: 2017-02-28
- Inventor: Chai-Wei Chang , Che-Cheng Chang , Po-Chi Wu , Yi-Cheng Chao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L21/3213 ; H01L21/8234
Abstract:
A FinFET device structure is provided. The FinFET device structure includes an isolation structure formed over a substrate and a fin structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure, and the first gate structure has a first width in a direction parallel to the fin structure, the second gate structure has a second width in a direction parallel to the fin structure, and the first width is smaller than the second width. The first gate structure includes a first work function layer having a first height. The second gate structure includes a second work function layer having a second height and a gap between the first height and the second height is in a range from about 1 nm to about 6 nm.
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