Invention Grant
- Patent Title: Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more
- Patent Title (中): 其中氧化物半导体层的结晶度为80%以上的半导体装置
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Application No.: US14834736Application Date: 2015-08-25
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Publication No.: US09583509B2Publication Date: 2017-02-28
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama , Masashi Tsubuku
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-185317 20090807; JP2009-206489 20090907
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L27/12 ; H01L29/786

Abstract:
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
Public/Granted literature
- US20150364502A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-17
Information query
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