Invention Grant
- Patent Title: Transistors with uniform density of poly silicon
- Patent Title (中): 具有均匀密度的多晶硅晶体管
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Application No.: US15072710Application Date: 2016-03-17
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Publication No.: US09583631B1Publication Date: 2017-02-28
- Inventor: Jade Deng , Keith Ma
- Applicant: VIA Alliance Semiconductor Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: VIA ALLIANCE SEMICONDUCTOR CO., LTD.
- Current Assignee: VIA ALLIANCE SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Shanghai
- Agency: McClure, Qualey & Rodack, LLP
- Priority: CN201510885222 20151204
- Main IPC: H03M1/00
- IPC: H03M1/00 ; H01L29/786 ; H03M7/16 ; H03M1/66
Abstract:
A transistor with uniform density of poly silicon includes a gate terminal, a drain terminal, and a source terminal. The gate terminal is constructed by a plurality of separated poly silicon, such that the density of the poly silicon is uniform.
Information query
