Invention Grant
US09583652B2 Method for the wet-chemical etching back of a solar cell emitter
有权
用于太阳能电池发射器的湿化学蚀刻的方法
- Patent Title: Method for the wet-chemical etching back of a solar cell emitter
- Patent Title (中): 用于太阳能电池发射器的湿化学蚀刻的方法
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Application No.: US13820540Application Date: 2011-09-02
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Publication No.: US09583652B2Publication Date: 2017-02-28
- Inventor: Agata Lachowicz , Berthold Schum , Knut Vaas
- Applicant: Agata Lachowicz , Berthold Schum , Knut Vaas
- Applicant Address: CH Neuchâtel
- Assignee: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA—RECHERCHE ET DEVÉLOPPEMENT
- Current Assignee: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA—RECHERCHE ET DEVÉLOPPEMENT
- Current Assignee Address: CH Neuchâtel
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Priority: DE102010037311 20100903; DE102011050136 20110505
- International Application: PCT/EP2011/065231 WO 20110902
- International Announcement: WO2012/028728 WO 20120308
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; C09K13/08 ; H01L21/306 ; H01L31/0224 ; H01L31/18
Abstract:
A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.
Public/Granted literature
- US20130255772A1 METHOD FOR THE WET-CHEMICAL ETCHING BACK OF A SOLAR CELL EMITTER Public/Granted day:2013-10-03
Information query
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