Invention Grant
- Patent Title: Method for manufacturing a photovoltaic module with annealing for forming a photovoltaic layer and electrically conducting region
- Patent Title (中): 用于制造具有用于形成光伏层和导电区域的退火的光伏组件的方法
-
Application No.: US14371224Application Date: 2013-01-09
-
Publication No.: US09583660B2Publication Date: 2017-02-28
- Inventor: Nicolas Karst , Sevak Amtablian , Simon Perraud
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Clark & Brody
- Priority: FR1250291 20120111
- International Application: PCT/IB2013/050167 WO 20130109
- International Announcement: WO2013/105024 WO 20130718
- Main IPC: H01L31/0392
- IPC: H01L31/0392 ; H01L31/046 ; H01L31/05 ; H01L31/032 ; H01L31/0463 ; H01L31/18

Abstract:
The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterized in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.
Public/Granted literature
Information query
IPC分类: