Invention Grant
- Patent Title: Tunable variable resistance memory device
- Patent Title (中): 可调电阻存储器件
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Application No.: US14962378Application Date: 2015-12-08
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Publication No.: US09583699B2Publication Date: 2017-02-28
- Inventor: Kristy A. Campbell
- Applicant: BOISE STATE UNIVERSITY
- Applicant Address: US ID Boise
- Assignee: BOISE STATE UNIVERSITY
- Current Assignee: BOISE STATE UNIVERSITY
- Current Assignee Address: US ID Boise
- Agency: Parsons Behle & Latimer
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The metal material may include tin. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer.
Public/Granted literature
- US20160351801A1 Tunable Variable Resistance Memory Device Public/Granted day:2016-12-01
Information query
IPC分类:
