A method of fabricating a semiconductor device is provided. The method includes forming semiconductor patterns on a semiconductor substrate, such that sides are surrounded by a lower interlayer insulating layer. A lower insulating layer is formed that covers the semiconductor patterns and the lower interlayer insulating layer. A contact structure is formed that penetrates the lower insulating layer and the lower interlayer insulating layer and is spaced apart from the semiconductor patterns. The contact structure has an upper surface higher than the semiconductor patterns. An upper insulating layer is formed covering the contact structure and the lower insulating layer. The upper and lower insulating layers form insulating patterns exposing the semiconductor patterns and covering the contact structure, and each of the insulating patterns includes a lower insulating pattern and an upper insulating pattern sequentially stacked. After the insulating patterns are formed, metal-semiconductor compounds are formed on the exposed semiconductor patterns.