Invention Grant
US09584104B2 Semiconductor device and method of operating a semiconductor device
有权
半导体器件及半导体器件的操作方法
- Patent Title: Semiconductor device and method of operating a semiconductor device
- Patent Title (中): 半导体器件及半导体器件的操作方法
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Application No.: US14214801Application Date: 2014-03-15
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Publication No.: US09584104B2Publication Date: 2017-02-28
- Inventor: Hubert Bode , Mathieu Gauthier Lesbats , Andreas Johann Roth
- Applicant: Hubert Bode , Mathieu Gauthier Lesbats , Andreas Johann Roth
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H03K3/01
- IPC: H03K3/01 ; H03K5/1252

Abstract:
A semiconductor device comprising a substrate and an electronic circuit thereon is described. The electronic circuit comprises a first voltage provider node, a second voltage provider node, and an intermediary node connected to the first and second voltage provider node by a first and second network with a first and second resistance, respectively. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor. The first network is arranged to reduce the first resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. Similarly, the second network is arranged to reduce the second resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa.A method of operating a semiconductor device is also disclosed.
Public/Granted literature
- US20150263713A1 SEMICONDUCTOR DEVICE AND METHOD OF OPERATING A SEMICONDUCTOR DEVICE Public/Granted day:2015-09-17
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