Invention Grant
- Patent Title: Substrate bias circuit and method for biasing a substrate
- Patent Title (中): 衬底偏置电路和偏置衬底的方法
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Application No.: US14836223Application Date: 2015-08-26
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Publication No.: US09584118B1Publication Date: 2017-02-28
- Inventor: Chris C. Dao , Stefano Pietri , Juxiang Ren , Robert S. Ruth
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A substrate bias circuit and method for biasing a substrate are provided. A substrate bias circuit includes a first voltage source, a second voltage source, a diode coupled between the first voltage source and the second voltage source, and a plurality of transistors, each transistor in the plurality of transistors having a substrate terminal. In one example, the first voltage source supplies, via the diode, the substrate terminal of a first transistor of the plurality of transistors during a power-up, and the second voltage source supplies the substrate terminal of the first transistor after the power-up.
Public/Granted literature
- US20170063371A1 SUBSTRATE BIAS CIRCUIT AND METHOD FOR BIASING A SUBSTRATE Public/Granted day:2017-03-02
Information query
IPC分类: