Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14655011Application Date: 2013-03-21
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Publication No.: US09585279B2Publication Date: 2017-02-28
- Inventor: Goro Yasutomi , Yukimasa Hayashida , Ryutaro Date
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2013/058048 WO 20130321
- International Announcement: WO2014/147787 WO 20140925
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H05K7/14 ; H01L23/049 ; H01L23/498

Abstract:
An electrode (3) is joined to a wiring substrate (2). A nut box (7) is inserted in the bent portion (5) of the electrode (3) so that the nut (6) is positioned in alignment with the opening (4) of the electrode (3). A case (8) covers the wiring substrate (2). The nut box (7) and the case (8) are members separate from each other. The nut box (7) is fixed in the electrode (3) so as not to come off from the bent portion 5).
Public/Granted literature
- US20150351276A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-12-03
Information query
IPC分类: