Invention Grant
US09586812B2 Device with vertically integrated sensors and method of fabrication
有权
具有垂直集成传感器和制造方法的装置
- Patent Title: Device with vertically integrated sensors and method of fabrication
- Patent Title (中): 具有垂直集成传感器和制造方法的装置
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Application No.: US14682282Application Date: 2015-04-09
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Publication No.: US09586812B2Publication Date: 2017-03-07
- Inventor: Matthieu Lagouge , Mamur Chowdhury
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.
Public/Granted literature
- US20160297673A1 DEVICE WITH VERTICALLY INTEGRATED SENSORS AND METHOD OF FABRICATION Public/Granted day:2016-10-13
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