Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14805624Application Date: 2015-07-22
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Publication No.: US09587994B2Publication Date: 2017-03-07
- Inventor: Kosuke Yayama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-168171 20140821
- Main IPC: H03M1/48
- IPC: H03M1/48 ; G01K15/00 ; G01K7/01

Abstract:
There is provided a semiconductor device which can provide desired output characteristics suitable to applications. A semiconductor device 10 includes a temperature sensing unit 11 which generates an analog sensing signal corresponding to a temperature, and an AD converter unit 12 which converts the analog sensing signal into a digital output signal corresponding to an adjusted temperature change rate based on a temperature change rate adjustment signal for adjusting the temperature change rate. The temperature change rate refers to a change in a detected temperature per bit of a digital output signal.
Public/Granted literature
- US20160054183A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
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