Invention Grant
US09588174B1 Method for testing through silicon vias in 3D integrated circuits
有权
通过3D集成电路中的硅通孔进行测试的方法
- Patent Title: Method for testing through silicon vias in 3D integrated circuits
- Patent Title (中): 通过3D集成电路中的硅通孔进行测试的方法
-
Application No.: US15064319Application Date: 2016-03-08
-
Publication No.: US09588174B1Publication Date: 2017-03-07
- Inventor: Raphael Peter Robertazzi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Shimokaji IP
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/3185 ; G01R31/3177 ; G01R31/317 ; G01R31/3187

Abstract:
A design-for-test (DFT) architecture for testing a three dimensional (3D) integrated circuit, may comprise a two dimensional (2D) silicon layer n−1 and a 2D silicon layer n connected together with a through silicon via (TSV) having a first side and a second side; scannable latch circuits on said first side and said second side of said TSV, wherein said scannable latch circuits: control flow of data between said layer n−1 and said layer n and allow said TSV to be verified; allow launch and capture clocks to be applied with variable delay in order to perform an alternating current delay fault test between said layer n−1 and said layer n; and have a quiescent state supply current (IDDq) test function built in which allows selection of an input load for a unidirectional signal connection between said layer n−1 and said layer n.
Information query