Various embodiments provide photomask patterns and methods for forming the same. In an exemplary method, a to-be-etched pattern can be provided. The to-be-etched pattern can be divided into a first mask pattern and an initial second mask pattern. The first mask pattern can include one or more first patterns and the initial second mask pattern can include one or more second patterns. A second print scattering pattern can be formed and added to the initial second mask pattern. A position of the second print scattering pattern can be separated from a position of the one or more first patterns of the first mask pattern.