Invention Grant
US09588428B2 Resist removing liquid, resist removal method using same and method for producing photomask
有权
抵抗除去液体，使用其的抗蚀剂去除方法和制造光掩模的方法
- Patent Title: Resist removing liquid, resist removal method using same and method for producing photomask
- Patent Title (中): 抵抗除去液体，使用其的抗蚀剂去除方法和制造光掩模的方法
-
Application No.: US14883730Application Date: 2015-10-15
-
Publication No.: US09588428B2Publication Date: 2017-03-07
- Inventor: Atsushi Mizutani
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-086743 20130417
- Main IPC: G03F7/30
- IPC: G03F7/30 ; G03F7/32 ; C11D1/38 ; C11D1/40 ; G03F7/42 ; B08B3/08 ; G03F1/22 ; C11D11/00 ; C11D7/32
Abstract:
A resist removal method includes removing a resist provided on a photomask substrate by bringing a resist removing liquid into contact with the resist in patterning of a photomask for EUV lithography in which the resist removing liquid contains an alkali compound, a specific nitrogen-containing compound, and water, and a content of the water is more than 50% by mass.
Public/Granted literature
- US20160033856A1 RESIST REMOVING LIQUID, RESIST REMOVAL METHOD USING SAME AND METHOD FOR PRODUCING PHOTOMASK Public/Granted day:2016-02-04
Information query
IPC分类:
