Invention Grant
- Patent Title: Creating default states for non-volatile memory elements
- Patent Title (中): 为非易失性存储器元素创建默认状态
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Application No.: US15070499Application Date: 2016-03-15
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Publication No.: US09589653B1Publication Date: 2017-03-07
- Inventor: Karl R. Erickson , Robert E. Kilker , Phil C. Paone , David P. Paulsen , Gregory J. Uhlmann
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Nathan M. Rau
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/24 ; G11C16/10 ; G11C16/26

Abstract:
A circuit has a wordline with an NVM element utilizing a first FET coupled to bitline true and a second FET coupled to bitline complement. A NFET coupled to the bitline complement is configured to pull bitline true toward ground in response to bitline complement reaching a first voltage. One or more wordline drivers are coupled to the NVM element such that a first path from a wordline driver is coupled to the first FET while a second path from a wordline driver is coupled to the second FET. The first path is current-limited in comparison to the second path, such that a first slew rate between a wordline driver and the first FET is slower than a second slew rate between a wordline driver and the second FET. The slew rate disparity allows the bitline complement to reach the first voltage.
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