Invention Grant
- Patent Title: Indium oxide transparent conductive film
- Patent Title (中): 氧化铟透明导电膜
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Application No.: US14291165Application Date: 2014-05-30
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Publication No.: US09589695B2Publication Date: 2017-03-07
- Inventor: Hideo Takami , Masakatsu Ikisawa
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson, LLP
- Priority: JP2009-232466 20091006
- Main IPC: H01B1/08
- IPC: H01B1/08 ; C03C17/23 ; C04B35/01 ; C23C14/08 ; C23C14/34 ; C04B35/626

Abstract:
An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.
Public/Granted literature
- US20140264197A1 Indium Oxide Transparent Conductive Film Public/Granted day:2014-09-18
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