Invention Grant
- Patent Title: In-situ etch rate determination for chamber clean endpoint
- Patent Title (中): 室内清洁终点的原位蚀刻速率测定
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Application No.: US15136788Application Date: 2016-04-22
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Publication No.: US09589773B2Publication Date: 2017-03-07
- Inventor: Sidharth Bhatia , Anjana M. Patel , Abdul Aziz Khaja
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: G01L21/30
- IPC: G01L21/30 ; G01R31/00 ; H01J37/32
Abstract:
Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.
Public/Granted literature
- US20160314944A1 IN-SITU ETCH RATE DETERMINATION FOR CHAMBER CLEAN ENDPOINT Public/Granted day:2016-10-27
Information query
