Invention Grant
- Patent Title: Cleaning method and composition in photolithography
- Patent Title (中): 光刻中的清洗方法和组成
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Application No.: US14471738Application Date: 2014-08-28
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Publication No.: US09589785B2Publication Date: 2017-03-07
- Inventor: Ya-Ling Cheng , Chien-Wei Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B08B3/10 ; C11D11/00 ; G03F1/00

Abstract:
The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate and forming a protection layer on the substrate; and applying a removing process to the substrate, thereby removing the protection layer from the substrate. The first cleaning fluid includes a cleaning chemical, a protection additive and a solvent.
Public/Granted literature
- US20160059272A1 Cleaning Method And Composition In Photolithography Public/Granted day:2016-03-03
Information query
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