Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US14593028Application Date: 2015-01-09
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Publication No.: US09589787B2Publication Date: 2017-03-07
- Inventor: Toru Shinaki , Takehiko Saito , Yoshinori Kondo , Masatoshi Fukushima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-013449 20140128
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L21/3213
Abstract:
The present invention makes it possible to increase the reliability of a semiconductor device. A manufacturing method of a semiconductor device according to the present invention includes a step of removing a patterned resist film and the step of removing a patterned resist film includes the steps of: (A) introducing at least a gas containing oxygen into a processing room; (B) starting electric discharge for transforming the gas containing oxygen into plasma; and (C) introducing a water vapor or an alcohol vapor into the processing room. On this occasion, the step (C) is applied either simultaneously with or after the step (B).
Public/Granted literature
- US20150214106A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-07-30
Information query
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