Invention Grant
US09589806B1 Integrated circuit with replacement gate stacks and method of forming same
有权
具有更换栅极堆叠的集成电路及其形成方法
- Patent Title: Integrated circuit with replacement gate stacks and method of forming same
- Patent Title (中): 具有更换栅极堆叠的集成电路及其形成方法
-
Application No.: US14886424Application Date: 2015-10-19
-
Publication No.: US09589806B1Publication Date: 2017-03-07
- Inventor: Ruqiang Bao , Unoh Kwon , Huihang Dong , John A. Fitzsimmons
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/283 ; H01L21/8238 ; H01L27/092 ; H01L29/49
Abstract:
An IC structure including: a first replacement gate stack for the pFET, the first replacement gate stack including: an interfacial layer in a first opening in the dielectric layer; a high-k layer over the interfacial layer in the first opening; a pFET work function metal layer over the high-k layer in the first opening; and a first gate electrode layer over the pFET work function metal layer and substantially filling the first opening; and a second replacement gate stack for the nFET, the second gate stack laterally adjacent to the first gate stack and including: the interfacial layer in a second opening in the dielectric layer; the high-k layer over the interfacial layer in the second opening; a nFET work function metal layer over the high-k layer in the second opening; and a second gate electrode layer over the nFET work function metal layer and substantially filling the second opening.
Information query
IPC分类:
