Invention Grant
- Patent Title: Shallow trench isolation regions made from crystalline oxides
- Patent Title (中): 浅沟槽隔离区由结晶氧化物制成
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Application No.: US14305502Application Date: 2014-06-16
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Publication No.: US09589827B2Publication Date: 2017-03-07
- Inventor: Kangguo Cheng , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek , Charan V. V. S. Surisetty
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L29/06 ; H01L21/8234
Abstract:
A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor structures on either side of the crystalline structure. Crystalline oxides may include rare earth oxides, aluminum oxides or Perovskites.
Public/Granted literature
- US20150364361A1 SHALLOW TRENCH ISOLATION REGIONS MADE FROM CRYSTALLINE OXIDES Public/Granted day:2015-12-17
Information query
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