Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US15063026Application Date: 2016-03-07
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Publication No.: US09589843B2Publication Date: 2017-03-07
- Inventor: Junji Ikura
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-073049 20150331
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/56 ; H01L23/495 ; H01L23/31

Abstract:
The manufacturing efficiency of a semiconductor device is improved. A method for manufacturing a semiconductor device includes a step of sealing a semiconductor chip using a mold die having a cavity, a gate part communicating with the cavity, and a vent part provided opposite to the gate part via the cavity, and extending in a first direction in a sealing step. Further, a lead frame has a first through hole provided at a position overlapping the cavity in the sealing step, and a second through hole provided outside the first through hole, and provided at a position overlapping the vent part in the sealing step. Whereas, in a second direction crossing with the first direction, the length of the second through hole is larger than the length (groove width) of the vent part.
Public/Granted literature
- US20160293452A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2016-10-06
Information query
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