Invention Grant
- Patent Title: Solid-state imaging element, method of manufacturing the same, and imaging device
- Patent Title (中): 固体摄像元件及其制造方法以及摄像装置
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Application No.: US14891541Application Date: 2014-06-19
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Publication No.: US09590003B2Publication Date: 2017-03-07
- Inventor: Kenichi Nishizawa
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Chip Law Group
- Priority: JP2013-134838 20130627
- International Application: PCT/JP2014/003291 WO 20140619
- International Announcement: WO2014/208060 WO 20141231
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.
Public/Granted literature
- US20160126276A1 SOLID-STATE IMAGING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGING DEVICE Public/Granted day:2016-05-05
Information query
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