Invention Grant
- Patent Title: Radiation-emitting semiconductor chip
- Patent Title (中): 辐射发射半导体芯片
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Application No.: US14702807Application Date: 2015-05-04
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Publication No.: US09590008B2Publication Date: 2017-03-07
- Inventor: Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102008059580 20081128; DE102009006177 20090126
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L27/15 ; H01L33/38 ; H01L33/00 ; H01L33/02

Abstract:
A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.
Public/Granted literature
- US20150236070A1 RADIATION-EMITTING SEMICONDUCTOR CHIP Public/Granted day:2015-08-20
Information query
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