Invention Grant
- Patent Title: Semiconductor device having diode characteristic
- Patent Title (中): 具有二极管特性的半导体器件
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Application No.: US14487975Application Date: 2014-09-16
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Publication No.: US09590030B2Publication Date: 2017-03-07
- Inventor: Mitsuhiko Kitagawa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2009-284584 20091215; JP2010-235063 20101020
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/861 ; H01L27/06 ; H01L27/08 ; H01L29/41 ; H01L29/20

Abstract:
According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.
Public/Granted literature
- US20150001668A1 SEMICONDUCTOR DEVICE HAVING DIODE CHARACTERISTIC Public/Granted day:2015-01-01
Information query
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