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US09590030B2 Semiconductor device having diode characteristic 有权
具有二极管特性的半导体器件

Semiconductor device having diode characteristic
Abstract:
According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.
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