Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14788009Application Date: 2015-06-30
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Publication No.: US09590043B2Publication Date: 2017-03-07
- Inventor: Lei Fang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201410369929 20140730
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L21/265
Abstract:
A semiconductor device includes a semiconductor substrate, and a P-well and an N-type drift region disposed in the semiconductor substrate. The P-well includes a lower well region and an upper well region disposed above the lower well region. The lower well region includes a first surface that is near the N-type drift region, and the upper well region includes a second surface that is near the N-type drift region. A distance from the first surface of the lower well region to the N-type drift region is greater than a distance from the second surface of the upper well region to the N-type drift region.
Public/Granted literature
- US20160035884A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-02-04
Information query
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