Invention Grant
- Patent Title: Thin film transistor, method for manufacturing the same, array substrate, and display device
- Patent Title (中): 薄膜晶体管,其制造方法,阵列基板和显示装置
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Application No.: US14436373Application Date: 2014-08-29
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Publication No.: US09590055B2Publication Date: 2017-03-07
- Inventor: Chunwei Wu , Woobong Lee
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN CN
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN CN
- Agency: Bakerhostetler LLP
- Priority: CN201410113582 20140325
- International Application: PCT/CN2014/085499 WO 20140829
- International Announcement: WO2015/143837 WO 20151001
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/417 ; H01L29/786 ; H01L27/12 ; H01L29/66

Abstract:
The present disclosure provides a thin film transistor and its manufacturing method, an array substrate, a display device. The thin film transistor includes a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode are formed above the active layer and located at a first end and a second end of the active layer which are opposite to each other, respectively. The drain electrode completely covers the second end of the active layer.
Public/Granted literature
- US20160293716A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND DISPLAY DEVICE Public/Granted day:2016-10-06
Information query
IPC分类: