Invention Grant
US09590120B2 MOS capacitors structures for variable capacitor arrays and methods of forming the same
有权
用于可变电容器阵列的MOS电容器结构及其形成方法
- Patent Title: MOS capacitors structures for variable capacitor arrays and methods of forming the same
- Patent Title (中): 用于可变电容器阵列的MOS电容器结构及其形成方法
-
Application No.: US15085834Application Date: 2016-03-30
-
Publication No.: US09590120B2Publication Date: 2017-03-07
- Inventor: Rien Gahlsdorf , Jianwen Bao
- Applicant: TDK Corporation
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Nixon Peabody LLP
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H01L29/94 ; H01L27/12 ; H01L27/08 ; H01L29/66 ; H01L29/08 ; H01L29/423 ; H01L27/02 ; H03H19/00 ; G05F3/20 ; G05F3/24
Abstract:
A capacitor structure is described. A capacitor structure including a substrate; a source/drain region formed in the substrate to form an active area having an active area width; and a plurality of gates formed above the substrate. The source/drain region having a reflection symmetry. Each of the plurality of gates having a gate width. The gate width is configured to be less than said active area width. And, the plurality of gates are formed to have reflection symmetry.
Public/Granted literature
- US20160293779A1 MOS CAPACITORS STRUCTURES FOR VARIABLE CAPACITOR ARRAYS AND METHODS OF FORMING THE SAME Public/Granted day:2016-10-06
Information query
IPC分类:
