Invention Grant
- Patent Title: Metal configurable hybrid memory
- Patent Title (中): 金属可配置混合存储器
-
Application No.: US15181007Application Date: 2016-06-13
-
Publication No.: US09590634B1Publication Date: 2017-03-07
- Inventor: Jonathan C. Park , Yau Kok Lai , Teck Siong Ong , Yin Hao Liew
- Applicant: BaySand Inc.
- Applicant Address: US CA Morgan Hill
- Assignee: BAYSAND INC.
- Current Assignee: BAYSAND INC.
- Current Assignee Address: US CA Morgan Hill
- Agency: Foley & Lardner LLP
- Agent Mark J. Danielson
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H01L27/118 ; H03K19/00 ; H03K19/173 ; G11C7/10

Abstract:
Embodiments of the invention relate to a metal configurable hybrid memory for use in integrated circuit designs for implementation in structured ASIC or similar platforms utilizing a base cell or standard cell. In accordance with certain aspects, a hybrid memory according to embodiments of the invention utilizes a fixed custom memory core and a customizable peripheral set of base cells. In accordance with these and further aspects, the hybrid memory can be specified using a macro, in which certain memory features (e.g. ECC, etc.) are implemented using the customizable peripheral set of base cells, and which may be selected or omitted from the design by the user. This enables the overall logic use for the memory to be optimized for a user's particular design. Unused logic in the customizable peripheral set of base cells can thus be freed for top-level logic use, thereby optimizing the design according to a user's functional and dimensional requirements and minimizing unnecessary waste of silicon area and power.
Information query
IPC分类: