Invention Grant
- Patent Title: Single varactor stack with low second-harmonic generation
- Patent Title (中): 具有低二次谐波生成的单变容二极管叠层
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Application No.: US15005235Application Date: 2016-01-25
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Publication No.: US09590669B2Publication Date: 2017-03-07
- Inventor: Peter V. Wright
- Applicant: TriQuint Semiconductor, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H01L27/08 ; H01L49/02

Abstract:
Embodiments include semiconductor devices related to compound varactor circuits. Specifically, a semiconductor device may be constructed of a modified anti-series string of varactor pairs, wherein one varactor in a varactor pair has an effective area larger than the other varactor. Varactor pairs in the anti-series string are arranged such that adjacent varactors coupling varactor pairs have equal effective areas. In some embodiments, the anti-series string may have four varactors (two varactor pairs.) In other embodiments, the anti-series string may have eight varactors (four varactor pairs) or twelve varactors (six varactor pairs). The compound varactor using the modified anti-series string of varactor pairs may be advantageous in reducing second harmonics related to parasitic capacitances in anti-series varactor applications.
Public/Granted literature
- US20160329918A1 SINGLE VARACTOR STACK WITH LOW SECOND-HARMONIC GENERATION Public/Granted day:2016-11-10
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