Invention Grant
- Patent Title: Wiring substrate and semiconductor device
- Patent Title (中): 接线基板和半导体器件
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Application No.: US14548568Application Date: 2014-11-20
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Publication No.: US09591750B2Publication Date: 2017-03-07
- Inventor: Masato Tanaka , Shoji Watanabe , Noriyoshi Shimizu
- Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Applicant Address: JP Nagano-shi, Nagano-ken
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi, Nagano-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-264671 20131220
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H05K1/18 ; H05K3/46 ; H01L23/14 ; H01L23/498

Abstract:
A wiring substrate includes first and second wiring structures. The first wiring structure includes a core substrate, first and second insulation layers formed from a thermosetting insulative resin respectively including first and second reinforcement materials, and a via wire formed in the first insulation layer. The second wiring structure includes a third insulation layer formed on an upper surface of the first insulation layer and an upper end surface of the via wire, and a wiring layer extended through the third insulation layer and electrically connected to the via wire. The outermost insulation layer, the main component of which is a photosensitive resin, is stacked on a lower surface of the second insulation layer. The second wiring structure has a higher wiring density than the first wiring structure. The first reinforcement material is partially exposed on the upper surface of the first insulation layer.
Public/Granted literature
- US20150181703A1 Wiring Substrate and Semiconductor Device Public/Granted day:2015-06-25
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