Invention Grant
- Patent Title: Voltage reference circuit
- Patent Title (中): 电压参考电路
-
Application No.: US14554353Application Date: 2014-11-26
-
Publication No.: US09594390B2Publication Date: 2017-03-14
- Inventor: Amit Kundu , Jaw-Juinn Horng
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: G06F7/14
- IPC: G06F7/14 ; G05F3/02

Abstract:
A voltage reference circuit is provided. In some embodiments, the voltage reference circuit includes a MOS stack that includes two or more MOS transistors having a substantially same voltage threshold. The voltage reference circuit is configured to generate, via the MOS stack, a first voltage waveform having a first temperature co-efficient and a second voltage waveform having a second temperature co-efficient. In some embodiments, the first temperature co-efficient has a polarity that is opposite a polarity of the second temperature co-efficient. In some embodiments, the first voltage waveform and the second voltage waveform are used to generate a reference voltage waveform, where the reference voltage waveform is substantially temperature independent due to the opposite polarities of the first temperature co-efficient and the second temperature co-efficient.
Public/Granted literature
- US20160147245A1 VOLTAGE REFERENCE CIRCUIT Public/Granted day:2016-05-26
Information query